Transport properties and barrier height evaluation in Ni/InAlN/GaN Schottky diodes

D. Donoval, A. Chvála, R. Šramatý, J. Kováč, E. Morvan, Ch. Dua, M. A. DiForte-Poisson, P. Kordoš
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3560919