Depth analysis of subgap electronic states in amorphous oxide semiconductor, a-In-Ga-Zn-O, studied by hard x-ray photoelectron spectroscopy

Kenji Nomura, Toshio Kamiya, Eiji Ikenaga, Hiroshi Yanagi, Keisuke Kobayashi, Hideo Hosono
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3560769