Contactless electroreflectance of AlGaN/GaN heterostructures deposited on c-, a-, m-, and (20.1)-plane GaN bulk substrates grown by ammonothermal method

R. Kudrawiec, M. Rudziński, M. Gladysiewicz, L. Janicki, P. R. Hageman, W. Strupiński, J. Misiewicz, R. Kucharski, M. Zając, R. Doradziński, R. Dwiliński
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3560537
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