Determination of bandgap states in p-type In0.49Ga0.51P grown on SiGe/Si and GaAs by deep level optical spectroscopy and deep level transient spectroscopy

M. González, A. M. Carlin, C. L. Dohrman, E. A. Fitzgerald, S. A. Ringel
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3559739