Bandgap shift by quantum confinement effect in 〈100〉 Si-nanowires derived from threshold-voltage shift of fabricated metal-oxide-semiconductor field effect transistors and theoretical calculations

Hironori Yoshioka, Naoya Morioka, Jun Suda, Tsunenobu Kimoto
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3559265