Effect of resistance-area product on spin-transfer switching in MgO-based magnetic tunnel junction memory cells

Z. M. Zeng, P. Khalili Amiri, G. Rowlands, H. Zhao, I. N. Krivorotov, J.-P. Wang, J. A. Katine, J. Langer, K. Galatsis, K. L. Wang, H. W. Jiang
  • Applied Physics Letters, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3556615
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