The effect of impurity-induced lattice strain and Fermi level position on low temperature oxygen diffusion in silicon

Zhidan Zeng, J. D. Murphy, R. J. Falster, Xiangyang Ma, Deren Yang, P. R. Wilshaw
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3555625
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