Nonvolatile memories using deep traps formed in HfO2 by Nb ion implantation

Min Choul Kim, Chang Oh Kim, Houng Taek Oh, Suk-Ho Choi, K. Belay, R. G. Elliman, S. P. Russo
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3554444