Tunnel magnetoresistance properties and annealing stability in perpendicular anisotropy MgO-based magnetic tunnel junctions with different stack structures

K. Mizunuma, S. Ikeda, H. Sato, M. Yamanouchi, H.D. Gan, K. Miura, H. Yamamoto, J. Hayakawa, F. Matsukura, H. Ohno
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3554092
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