Atomic layer deposited beryllium oxide: Effective passivation layer for III-V metal/oxide/semiconductor devices

J. H. Yum, T. Akyol, M. Lei, T. Hudnall, G. Bersuker, M. Downer, C. W. Bielawski, J. C. Lee, S. K. Banerjee
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3553872
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