Electrical properties of AlxGa1-xN/GaN heterostructures with low Al content

K. Köhler, S. Müller, P. Waltereit, W. Pletschen, V. Polyakov, T. Lim, L. Kirste, H. P. Menner, P. Brückner, O. Ambacher, C. Buchheim, R. Goldhahn
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3553866
The author haven't yet claimed this publicationThe author haven't yet claimed this publication