Electrical properties of AlxGa1-xN/GaN heterostructures with low Al content

K. Köhler, S. Müller, P. Waltereit, W. Pletschen, V. Polyakov, T. Lim, L. Kirste, H. P. Menner, P. Brückner, O. Ambacher, C. Buchheim, R. Goldhahn
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3553866