Enhancement-mode AlGaN/GaN heterostructure field effect transistors fabricated by selective area growth technique

  • Yuhua Wen, Zhiyuan He, Jialin Li, Ruihong Luo, Peng Xiang, Qingyu Deng, Guangning Xu, Zhen Shen, Zhisheng Wu, Baijun Zhang, Hao Jiang, Gang Wang, Yang Liu
  • Applied Physics Letters, February 2011, American Institute of Physics
  • DOI: 10.1063/1.3553229

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http://dx.doi.org/10.1063/1.3553229

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