Capacitance-voltage and deep-level-transient spectroscopy characterization of defects near SiO2/SiC interfaces

A. F. Basile, J. Rozen, J. R. Williams, L. C. Feldman, P. M. Mooney
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3552303