Strain relief and AlSb buffer layer morphology in GaSb heteroepitaxial films grown on Si as revealed by high-angle annular dark-field scanning transmission electron microscopy

S. Hosseini Vajargah, M. Couillard, K. Cui, S. Ghanad Tavakoli, B. Robinson, R. N. Kleiman, J. S. Preston, G. A. Botton
  • Applied Physics Letters, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3551626
The author haven't yet claimed this publicationThe author haven't yet claimed this publication