A two-dimensional analytical model for the gate–source and gate–drain capacitances of ion-implanted short-channel GaAs metal-semiconductor-field effect transistor under dark and illuminated conditions

Shweta Tripathi, S. Jit
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3549257
The author haven't yet claimed this publicationThe author haven't yet claimed this publication