InP-based heterojunction bipolar transistors with InGaAs/GaAs strained-layer-superlattice

R. Driad, R. Aidam, Q. Yang, M. Maier, H. Güllich, M. Schlechtweg, O. Ambacher
  • Applied Physics Letters, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3549199