Functional gate metal-oxide-semiconductor field-effect transistors using tunnel injection/ejection of trap charges enabling self-adjustable threshold voltage for ultralow power operation

  • Anri Nakajima, Takashi Kudo, Takashi Ito
  • Applied Physics Letters, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3549178

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http://dx.doi.org/10.1063/1.3549178

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