Comment on “The impact of piezoelectric polarization and nonradiative recombination on the performance of (0001) face GaN-InGaN photovoltaic devices” [Appl. Phys. Lett. 96, 051107 (2010)]

  • Applied Physics Letters, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3544929

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http://dx.doi.org/10.1063/1.3544929

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