Electrical transport properties of the Si-doped cubic boron nitride thin films prepared by in situ cosputtering

J. Ying, X. W. Zhang, Z. G. Yin, H. R. Tan, S. G. Zhang, Y. M. Fan
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3544065
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