Molecular beam epitaxial growth of metamorphic AlInSb/GaInSb high-electron-mobility-transistor structures on GaAs substrates for low power and high frequency applications

R. Loesch, R. Aidam, L. Kirste, A. Leuther
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3544041