IR studies of the impact of Ge doping on the successive conversion of VO[sub n] defects in Czochralski-Si containing carbon

C. A. Londos, A. Andrianakis, E. N. Sgourou, V. V. Emtsev, H. Ohyama
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3544040