Strong Stark effect in electroluminescence from phosphorous-doped silicon-on-insulator metal-oxide-semiconductor field-effect transistors

  • J. Noborisaka, K. Nishiguchi, Y. Ono, H. Kageshima, A. Fujiwara
  • Applied Physics Letters, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3543849

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http://dx.doi.org/10.1063/1.3543849

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