Channel direction, effective field, and temperature dependencies of hole mobility in (110)-oriented Ge-on-insulator p-channel metal-oxide-semiconductor field-effect transistors fabricated by Ge condensation technique

Mitsuru Takenaka, Shinichi Takagi, Sanjeewa Dissanayake, Yi Zhao, S. Sugahara
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3537919
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