A systematic study of (NH[sub 4])[sub 2]S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al[sub 2]O[sub 3]/In[sub 0.53]Ga[sub 0.47]As/InP system for n-type and p-type In[sub 0.53]Ga[sub 0.47]As epitaxial layers

É. O’Connor, B. Brennan, V. Djara, K. Cherkaoui, S. Monaghan, S. B. Newcomb, R. Contreras, M. Milojevic, G. Hughes, M. E. Pemble, R. M. Wallace, P. K. Hurley
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3533959