High electron mobility due to sodium ions in the gate oxide of SiC-metal-oxide-semiconductor field-effect transistors

B. R. Tuttle, S. Dhar, S.-H. Ryu, X. Zhu, J. R. Williams, L. C. Feldman, S. T. Pantelides
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3533767
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