Misfit dislocation formation at heterointerfaces in (Al,In)GaN heteroepitaxial layers grown on semipolar free-standing GaN substrates

F. Wu, A. Tyagi, E. C. Young, A. E. Romanov, K. Fujito, S. P. DenBaars, S. Nakamura, J. S. Speck
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3531577