Interface state energy distribution and P[sub b] defects at Si(110)/SiO[sub 2] interfaces: Comparison to (111) and (100) silicon orientations

N. H. Thoan, K. Keunen, V. V. Afanas’ev, A. Stesmans
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3527909