Measurement of valence-band offsets of InAlN/GaN heterostructures grown by metal-organic vapor phase epitaxy

M. Akazawa, B. Gao, T. Hashizume, M. Hiroki, S. Yamahata, N. Shigekawa
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3527058