Characterizing the effects of etch-induced material modification on the crystallization properties of nitrogen doped Ge[sub 2]Sb[sub 2]Te[sub 5]

S. Raoux, J. L. Jordan-Sweet, D. Miller, H.-Y. Cheng, A. G. Schrott, C.-F. Chen, R. Dasaka, B. Shelby, G. Lucovsky, M. A. Paesler, L. Miotti, H.-L. Lung, Y. Zhang, C. H. Lam, J. S. Washington, E. A. Joseph
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3524510
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