Dehydrogenation of defects and hot-electron degradation in GaN high-electron-mobility transistors

Y. S. Puzyrev, T. Roy, M. Beck, B. R. Tuttle, R. D. Schrimpf, D. M. Fleetwood, S. T. Pantelides
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3524185