Far‐infrared measurements of the mobility and carrier concentration in lightly doped GaAs on Si(100)

S. Morley, D. R. T. Zahn, T. Eickhoff, W. Richter, D. A. Woolf, D. I. Westwood, R. H. Williams
  • Journal of Applied Physics, July 1992, American Institute of Physics
  • DOI: 10.1063/1.351845
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The following have contributed to this page: Professor Dietrich RT Zahn