Far‐infrared measurements of the mobility and carrier concentration in lightly doped GaAs on Si(100)

S. Morley, D. R. T. Zahn, T. Eickhoff, W. Richter, D. A. Woolf, D. I. Westwood, R. H. Williams
  • Journal of Applied Physics, July 1992, American Institute of Physics
  • DOI: 10.1063/1.351845

The authors haven't finished explaining this publication. If you are the author, sign in to claim or explain your work.

Read Publication

http://dx.doi.org/10.1063/1.351845

The following have contributed to this page: Professor Dietrich RT Zahn