Low-temperature hydrophobic silicon wafer bonding

Q.-Y. Tong, Q. Gan, G. Hudson, G. Fountain, P. Enquist, R. Scholz, U. Gösele
  • Applied Physics Letters, December 2003, American Institute of Physics
  • DOI: 10.1063/1.1632032

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http://dx.doi.org/10.1063/1.1632032

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