Raman spectroscopy of GaN nucleation and free-standing layers grown by hydride vapor phase epitaxy on oxidized silicon

E. V. Konenkova, Yu. V. Zhilyaev, V. A. Fedirko, D. R. T. Zahn
  • Applied Physics Letters, July 2003, American Institute of Physics
  • DOI: 10.1063/1.1592623
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The following have contributed to this page: Professor Dietrich RT Zahn