Influence of GaN domain size on the electron mobility of two-dimensional electron gases in AlGaN/GaN heterostructures determined by x-ray reflectivity and diffraction

Zhenyang Zhong, O. Ambacher, A. Link, V. Holy, J. Stangl, R. T. Lechner, T. Roch, G. Bauer
  • Applied Physics Letters, May 2002, American Institute of Physics
  • DOI: 10.1063/1.1479206

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