Growth of buried silicon oxide in Si–Si bonded wafers upon annealing

C. Himcinschi, A. Milekhin, M. Friedrich, K. Hiller, M. Wiemer, T. Gessner, S. Schulze, D. R. T. Zahn
  • Journal of Applied Physics, January 2001, American Institute of Physics
  • DOI: 10.1063/1.1338512
The author haven't finished explaining this publicationThe author haven't finished explaining this publication

The following have contributed to this page: Professor Dietrich RT Zahn