Electron beam‐enhanced etching of InAs in Cl2gas and novelinsitupatterning of GaAs with an InAs mask layer

  • S. Miya, T. Yoshida, Y. Kadoya, B. Akamatsu, H. Noge, H. Kano, H. Sakaki
  • Applied Physics Letters, September 1993, American Institute of Physics
  • DOI: 10.1063/1.110663

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http://dx.doi.org/10.1063/1.110663

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