What is it about?
A 3D device investigation on TFET using gate all around structure
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Why is it important?
It can work on low voltage with high immunity to short channnel effect
Perspectives
This is very authenticated and accurate journal with highly purified research
Mr. Ankur Beohar
Indian Institute of Technology Indore
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This page is a summary of: Performance enhancement of asymmetrical underlap 3D-cylindrical GAA-TFET with low spacer width, Micro & Nano Letters, August 2016, the Institution of Engineering and Technology (the IET),
DOI: 10.1049/mnl.2016.0202.
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