Optimum current-voltage characteristics of GaAs/AlAs intraband microwave devices

  • Chih Chin Yang, Ting Chang Chang, Yan Kuin Su
  • Micro & Nano Letters, September 2015, the Institution of Engineering and Technology (the IET)
  • DOI: 10.1049/mnl.2015.0002

Resonant tunneling device of high power output and wide operation region.

What is it about?

The peak current density reaches 2.43 KA/cm2 as the i-AlAs barriers reaches 5 nm thickness. The optimal thickness of barrier layers should be selected at 4 nm thickness to obtain the highest PVCR value (about 4270).

Why is it important?

Highest current density and PVCR are obtained in this resaerch via the suitable design of device structure.

Perspectives

Dr Chih Chin Yang
National Kaohsiung Marine University

Other compound materials and device designs might be also selected to fabricate the devices of well resonant tunneling properties applied in microwave transmission.

Read Publication

http://dx.doi.org/10.1049/mnl.2015.0002

The following have contributed to this page: Dr Chih Chin Yang