What is it about?
The peak current density reaches 2.43 KA/cm2 as the i-AlAs barriers reaches 5 nm thickness. The optimal thickness of barrier layers should be selected at 4 nm thickness to obtain the highest PVCR value (about 4270).
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Why is it important?
Highest current density and PVCR are obtained in this resaerch via the suitable design of device structure.
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This page is a summary of: Optimum current-voltage characteristics of GaAs/AlAs intraband microwave devices, Micro & Nano Letters, September 2015, the Institution of Engineering and Technology (the IET),
DOI: 10.1049/mnl.2015.0002.
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