What is it about?
A dual-gate AlGaAs/GaAs pHEMT transistor is analyzed based on the distributed modeling approach wherein the transistor is considered as an active multi conductor transmission line (AMCTL). Discretization of the governing matrix Telegrapher's equation is carried out using the implicit Crank-Nicolson (CN) finite-difference time-domain (FDTD) method.
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Why is it important?
Due to the unconditional stability of this method, It is observed that the time step-size can be increased by the factor of 5000 without sacrificing the accuracy compared to the conditional stable leaf-frog (LF) FDTD method.
Perspectives
That was a great pleasure and during this research, I had collaboration with my co-author, leading to other research and papers.
Mahdieh Gholami Mayani
Shahid Beheshti University
Read the Original
This page is a summary of: Efficient Time-Domain Analysis of Dual-gate HEMT Using the CN-FDTD Method , IET Science Measurement & Technology, March 2018, the Institution of Engineering and Technology (the IET),
DOI: 10.1049/iet-smt.2017.0398.
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