What is it about?

Improving EMI characteristic during the design phase of a device is always a challenging but a must do in order to avoid costly redesigns. To have the opportunity to understand certain effects that influence EMI by analysing transient switching behaviour in you laboratory without the need of expensive EMI equipment is a big advantage. This paper shows one approach of utilizing transient time domain measurements, with which especially the influence of parasitic elements on oscillations can be investigated in detail.

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This page is a summary of: Methodology for analysing radiated EMI characteristics using transient time domain measurements, IET Power Electronics, August 2016, the Institution of Engineering and Technology (the IET),
DOI: 10.1049/iet-pel.2015.0799.
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