Theoretical and experimental comparison of SiC and GaN devices under different switching conditions

What is it about?

SiC and GaN power semiconductor devices can improve electrical energy conversion efficiency when they are applied to power converters. Due to SiC and GaN device power rating mismatch, there is rarely any research work comparing their switching losses. In the paper, it is at first shown analytically that losses of a lower voltage SiC device is not better than a higher voltage SiC device with the same current rating because of low channel mobility. Afterwards, device switching losses of GaN and SiC devices are compared in both hard and soft switching conditions to demonstrate it.

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Why is it important?

The results demonstrate that lower voltage SiC device is not better than a higher voltage SiC device in terms of device losses. The results of the paper can help electrical engineers to select an appropriate device for their design of power converters.

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