What is it about?
Silicon surface is where the nice crystal structure is completely ruined. Hence, it is necessary to seperate charge transfer path from silicon surface. This is done in a lot of devices. But not for a truely vertical charge transfer. In this paper we see that it is possible to do the seperation of charge transfer path and also it solves the noise problem of the original CDTI-based device.
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Why is it important?
The concept of vertical charge transfer is interesting on it's own. However, by the fast trend towards smaller than 1 um pixels the way charges are transferred becomes more important. On the other hand, the present device can serve as a shared transfer gate which can lower the number of pixel transistors and the problems they bring.
Perspectives
The manuscript is simple and delivers what is promised by it's title and abstract. Also, adding defects to any device can be a real source of pain! This work adds defects to all the silicon-oxide interfaces and deals with the problem easily.
Hamzeh Alaibakhsh
Iran University of Science and Technology
Read the Original
This page is a summary of: A 3-D Device-Level Simulation of Charge Separation from Sidewall in Vertical Transfer Gate Pinned Photodiode Pixels for Noise Mitigation, IET Circuits Devices & Systems, February 2020, the Institution of Engineering and Technology (the IET),
DOI: 10.1049/iet-cds.2019.0501.
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