Analog performance of gate all around silicon nano wire

What is it about?

In this paper, an air spacer used in the source/drain underlap gate-all-around silicon nanowire for enhancing the analog/RF performance of the device in terms of transconductance (gm), intrinsic gain (Av), cut-off frequency (fT), maximum oscillation frequency or unity power gain frequency (fmax). Transconductance frequency product (TFP), gain frequency product (GFP) and gain transconductance frequency (GTFP) are also analyzed.

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Why is it important?

Use of air spacer in the underlap region of GAA-SNWT instead of conventional SiO2/Si3N4 dielectric deteriorates the fringing capacitances of the device. This reduction in the fringe capacitance further reduces the overall device capacitance which enhances the frequency performance of the device.