Publication not explained
This publication has not yet been explained in plain language by the author(s). However, you can still read the publication.
If you are one of the authors, claim this publication so you can create a plain language summary to help more people find, understand and use it.
Read the Original
This page is a summary of: Effect of Mg insertion on time-dependent dielectric breakdown in MgO-based magnetic tunnel junctions, Electronics Letters, June 2016, the Institution of Engineering and Technology (the IET), DOI: 10.1049/el.2016.0686.
You can read the full text:
The following have contributed to this page