What is it about?
Low cost photodiode/ phototransistor is an important device in microwave photonics systems for different applications and functionalities such as RoF, bio-medical systems, airplanes, beam forming, optoelectronic oscillators etc... In this work we have shown the first edge illuminated SiGe phototransistor based on the available commercial SiGe/Si BiCMOS technology. Its technology and structure are described. The phototransistor exhibits a cutoff frequency of 890 MHz and low frequency responsivity of 0.45 A/W at 850 nm . This new SiGe/Si phototransistor structure provides a cutoff frequency double that of a top illuminated SiGe/Si phototransistor obtained using the same BiCMOS technology.
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This page is a summary of: Edge illuminated SiGe heterojunction phototransistor for RoF applications, Electronics Letters, November 2015, the Institution of Engineering and Technology (the IET),
DOI: 10.1049/el.2015.2448.
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