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The article reports a simple AlGaN/GaN heterostructure of high quality, which enables stable and decent device operations in both DC and RF regimes. The reported small signal characteristics i.e fT and fMAX of unpassivated HEMTs on Si substrate are exciting.
Dr Dennis christy
Nagoya Institute of Technology
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This page is a summary of: High fT and f MAX for 100 nm unpassivated rectangular gate AlGaN/GaN HEMT on high resistive silicon (111) substrate, Electronics Letters, August 2015, the Institution of Engineering and Technology (the IET),
DOI: 10.1049/el.2015.1395.
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