What is it about?

The high level of integration in digital electronic chips based on three-dimensional (3D) technology requires accurate modelling of the vertical interconnects (the through silicon vias - TSVs). An accurate prediction of the signal propagation and crosstalk of the TSVs cannot be based on the single via since the interaction among adjacent TSVs in a high density array cannot be neglected. An algorithm is proposed that extends the approach for modelling a TSV array with a complete analytical evaluation of the final multiport scattering parameter matrix, thus making the electromagnetic modelling of such structures more efficient without relying on commercial circuit solvers.

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Why is it important?

The proposed method requires much less processing time with respect to commercial solvers with a comparable accuracy.

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This page is a summary of: Analytical evaluation of scattering parameters for equivalent circuit of through silicon via array, Electronics Letters, June 2015, the Institution of Engineering and Technology (the IET),
DOI: 10.1049/el.2015.1265.
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