Analytical modelling of gate tunnelling current of MOSFETs based on quantum tunnelling

I.A. Kazerouni, S.E. Hosseini, M.K. Parashkoh
  • Electronics Letters, January 2010, the Institution of Engineering and Technology (the IET)
  • DOI: 10.1049/el.2010.1339

The authors haven't finished explaining this publication. If you are the author, sign in to claim or explain your work.

Read Publication

http://dx.doi.org/10.1049/el.2010.1339

The following have contributed to this page: Iman Abaspur Kazerouni

In partnership with: