Efficient Time-Domain Analysis of Dual-gate HEMT Using the CN-FDTD Method

Mahdieh Gholami, Shahrooz Asadi
  • IET Science Measurement & Technology, March 2018, the Institution of Engineering and Technology (the IET)
  • DOI: 10.1049/iet-smt.2017.0398

The unconditionally stable Crank Nicolson FDTD method applied to HEMT transistor

What is it about?

A dual-gate AlGaAs/GaAs pHEMT transistor is analyzed based on the distributed modeling approach wherein the transistor is considered as an active multi conductor transmission line (AMCTL). Discretization of the governing matrix Telegrapher's equation is carried out using the implicit Crank-Nicolson (CN) finite-difference time-domain (FDTD) method.

Why is it important?

Due to the unconditional stability of this method, It is observed that the time step-size can be increased by the factor of 5000 without sacrificing the accuracy compared to the conditional stable leaf-frog (LF) FDTD method.


Mahdieh Gholami Mayani (Author)

That was a great pleasure and during this research, I had collaboration with my co-author, leading to other research and papers.

The following have contributed to this page: Mahdieh Gholami Mayani

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