The unconditionally stable Crank Nicolson FDTD method applied to HEMT transistor
What is it about?
A dual-gate AlGaAs/GaAs pHEMT transistor is analyzed based on the distributed modeling approach wherein the transistor is considered as an active multi conductor transmission line (AMCTL). Discretization of the governing matrix Telegrapher's equation is carried out using the implicit Crank-Nicolson (CN) finite-difference time-domain (FDTD) method.
Why is it important?
Due to the unconditional stability of this method, It is observed that the time step-size can be increased by the factor of 5000 without sacrificing the accuracy compared to the conditional stable leaf-frog (LF) FDTD method.
The following have contributed to this page: Mahdieh Gholami Mayani
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